Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors

The current response to sub-terahertz radiation was studied experimentally over a wide range of temperatures for AlGaN/GaN and graphene transistors. It found that the responsivity is enhanced at low by about an order magnitude more than two orders However, increase saturates below 70–100 K. These results were explained temperature dependence charge carriers' mobility, which plays dominant role in responsivity. also shown realistic device, access resistance may decrease responsivity, case high resistance, subthreshold swing affect showed extremely mobility makes it very promising high-frequency detectors.